This device will be released soon.

RF power GaN-SiC HEMT

The CLF24H4LS600PX is a 600 W internally pre-matched and post-matched GaN HEMT power transistor optimized for best power and efficiency at frequencies from 2400 MHz to 2500 MHz.

The CLF24H4LS600PX is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Excellent ruggedness under CW and CW pulsed conditions
  • High output impedance
  • Internally pre-matched and post-matched
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • RF power amplifiers for applications in the 2400 MHz to 2500 MHz frequency range such as heating, plasma generator and other ISM applications

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2400 2500 MHz
PL(3dB) nominal output power at 3 dB gain compression 622 W
Test signal: CW
PL [0] output power f = 2500 MHz [1] 622 W
Gp power gain f = 2500 MHz [1] 18.6 dB
ηD [0] drain efficiency f = 2500 MHz [1] 73.8 %

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
CLF24H4LS600PX ACC-1230
(SOT539B)
sot539b_po 3BL-TRAY 60-fold; DP SOT539B_SIM Development Standard Marking CLF24H4LS600PXU
(934961095112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source [2]

Recommended line-up

No documentation available.