Nijmegen, The Netherlands, June 8, 2026 – Ampleon announces the C5H4850N55D, a high-efficiency 55 W GaN Doherty RF power transistor designed to meet the evolving demands of 5 GHz base station and multi-carrier communication systems. Covering the 4800 MHz to 5000 MHz frequency range, the device combines advanced Doherty architecture with broadband performance and ease of integration, enabling higher efficiency and improved linearity in next-generation Wireless Infrastructure.
As network operators continue to push for higher data throughput and improved energy efficiency, RF power amplifier designers are under increasing pressure to maintain linearity and efficiency across wide bandwidths and high peak-to-average power ratios. These requirements often introduce complexity at both the device and system level, particularly in Doherty amplifier designs. The C5H4850N55D addresses these challenges by offering a highly optimized, internally matched GaN solution that enables efficient Doherty operation while simplifying implementation and reducing design effort.
In a typical Doherty application, the device delivers up to approximately 50 % drain efficiency across the band with gain levels up to 14 dB under W-CDMA conditions, supporting efficient amplification of high-PAR signals while maintaining strong linearity performance. Its capability for excellent digital pre-distortion (DPD) further enhances system-level linearity, allowing designers to meet stringent spectral requirements in modern communication systems. The transistor also supports output power levels up to 45 dBm at compression, providing sufficient headroom for demanding multi-carrier and broadband applications.
Robustness remains essential in high-frequency RF designs, and the C5H4850N55D delivers reliable operation under mismatch conditions, with the ability to withstand load variations up to a 10:1 VSWR in Doherty operation. This resilience ensures stable performance in real-world deployments, where impedance conditions can vary and system reliability is critical.
Beyond performance, the device is engineered for compact and efficient system integration. The internally matched input design reduces the complexity of external matching networks, while the compact 8 mm x 8 mm QFN package enables high power density and efficient use of board space. Together, these features allow engineers to design smaller, more efficient RF front ends without compromising performance.
The C5H4850N55D is now available through Ampleon’s global distribution network. For pricing and ordering information, please contact your local Ampleon sales representative or preferred distributor.
For more information, visit:
www.ampleon.com/pip/C5H4850N55D
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For further information and reader inquiries:
Igor Lalicevic, Senior Director, Product Marketing,
Ampleon Netherlands B.V.,
Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands,
Email: igor.lalicevic@ampleon.com,
www.ampleon.com
About Ampleon:
Created in 2015 and headquartered in the Netherlands, Ampleon is shaped by nearly 60 years of RF power leadership. The company envisions to advance society through innovative RF solutions based on GaN and LDMOS technologies. Ampleon is dedicated to being the partner of choice by delivering high-quality, high-performance RF products with its world-class talent. The portfolio offers flexibility in scaling design and production for any volume and addresses applications for 4G LTE, 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio. Proven reliability, secure supply and excellent product consistency enable highest manufacturing yields for customers who benefit from Ampleon being a one-stop-partner for RF power solutions. For more details, please visit www.ampleon.com.