Nijmegen, The Netherlands, May 26, 2026 – Ampleon announce the C5H3440N70D, a 70 W GaN Doherty RF power transistor engineered to deliver high efficiency, broadband performance and excellent linearity for next-generation massive MIMO base stations. Covering the 3.4 GHz to 4.0 GHz frequency range, the device is designed to help RF engineers meet the increasing demands of modern communication systems while simplifying amplifier design and improving overall system efficiency.
As wireless infrastructure evolves toward higher bandwidths and more complex modulation schemes, designers face growing pressure to maintain efficiency and linearity across wide frequency ranges and high peak-to-average power ratios. These requirements often introduce significant design complexity, particularly in Doherty architectures where performance must be carefully balanced across carrier and peaking paths. The C5H3440N70D addresses these challenges with a highly optimized GaN solution that enables efficient Doherty operation while reducing the burden of RF design and integration.
At typical operating conditions, the device delivers 39.8 dBm average output power with gain of around 12.7 dB and drain efficiency exceeding 50%, while supporting output power levels approaching 48 dBm at compression. This combination of efficiency and output capability allows designers to achieve higher power density and improved energy performance in base station amplifiers, directly contributing to reduced operating costs and enhanced system throughput.
The C5H3440N70D is specifically optimized for broadband Doherty operation across the 3.4 GHz to 4.0 GHz range, enabling support for multi-band and multi-carrier deployments without the need for extensive redesign. Its excellent digital pre-distortion capability ensures that linearity requirements can be met efficiently at system level, supporting modern high-PAR signals while maintaining spectral compliance. Internal matching further simplifies implementation, reducing external component count and accelerating development cycles.
In real-world RF environments, robustness is critical, and the C5H3440N70D is designed to operate reliably under demanding conditions, including the ability to withstand load mismatch up to a 10:1 VSWR in Doherty operation. This ensures stable performance even in the presence of reflections and dynamic load variations, providing engineers with greater confidence in system reliability.
The C5H3440N70D is now available through Ampleon’s global distribution network. For pricing and ordering information, please contact your local Ampleon sales representative or preferred distributor.
For more information, visit:
www.ampleon.com/pip/C5H3440N70D
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For further information and reader inquiries:
Igor Lalicevic, Senior Director, Product Marketing,
Ampleon Netherlands B.V.,
Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands,
Email: igor.lalicevic@ampleon.com,
www.ampleon.com
About Ampleon:
Created in 2015 and headquartered in the Netherlands, Ampleon is shaped by nearly 60 years of RF power leadership. The company envisions to advance society through innovative RF solutions based on GaN and LDMOS technologies. Ampleon is dedicated to being the partner of choice by delivering high-quality, high-performance RF products with its world-class talent. The portfolio offers flexibility in scaling design and production for any volume and addresses applications for 4G LTE, 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio. Proven reliability, secure supply and excellent product consistency enable highest manufacturing yields for customers who benefit from Ampleon being a one-stop-partner for RF power solutions. For more details, please visit www.ampleon.com.