Revolutionizing RF
… is the theme of this year’s International Microwave Symposium (IMS) 2026, the world’s leading microwave event, taking place in Boston from June 7 to 12. Visit us on the exhibition floor at Booth #17048, where we will present our latest GaN and LDMOS RF solutions. Our experts will be available to discuss how we are advancing society through RF technology.
TECHNICAL SESSION Tu3C | Tuesday 9 June 2026 | 13:30 - 15:10
Advanced Integration Technologies for Power Amplifier and Low-Noise Amplifier Design by Mohadig Rousstia, Ayad Ghannam, Mariano Ercoli, John Gajadharsing.
Ampleon highlights include our new wideband GaN power amplifier modules for massive MIMO, compact integrated Doherty drivers and macro finals for sub-1 GHz to 2.7 GHz base stations, advanced-rugged ART RF power transistors with integrated thermal sensing, and high-power GaN-on-SiC solutions for industrial, medical, and scientific applications. We will also demonstrate high-efficiency amplifiers for radar, avionics, and particle accelerator systems, showcasing the performance and reliability required for the most demanding RF applications.
G1M3438P70C
- High-efficiency fully integrated Doherty Power Amplifier Module for 64T massive MIMO applications
- 400 MHz RF bandwidth covering 3.4–3.8 GHz with 50 Ω input and output
- Compact LGA 12 x 8 mm package enabling highly integrated radio designs
C5H3438N110D
- High-efficiency Doherty GaN final for 3.4–3.8 GHz 32T massive MIMO radios
- 400 MHz wideband performance supporting next-generation radio architectures
- Compact QFN 8 x 8 mm package enabling dense RF front-end integration
C5H3440N70D
- Wideband GaN final covering 3.4–4.0 GHz for flexible massive MIMO deployments
- High-efficiency Doherty architecture with broadband operation
- Compact QFN 8 x 8 mm package for space-constrained designs
C4H10P600A
- Cost-effective, highly efficient GaN Macro final for 60–80 W base stations operating from 600–1000 MHz
- Optimized for sub-1 GHz cellular infrastructure applications
- Compact OMP780 footprint reducing system size and cost
C4H27P400A
- Highly efficient 40 W GaN Macro final for 2.5–2.7 GHz base stations
- Compact OMP780 footprint for cost-effective radio designs
- Optimized for high-band macro radio deployments
ART500PE
- ART technology integrated into an industry-standard TO247 package for easy assembly and cost-effective system design
- Designed for full continuous-wave ISM, broadcast, and non-cellular communications applications
- Delivers up to 510 W output power at 65 V operation
- Outstanding efficiency of up to 81% at 27 MHz reduces cooling and operating costs
- Enables compact, robust RF power solutions using Ampleon's proven ART technology
ART4K0FX
- Full CW 13.56 MHz RF power solution delivering up to 2500 W output power
- Optimized for maximum power and efficiency using the same PCB platform
- Industry-leading compact size of only 152 x 60 x 30 mm
- Unique patented multilayer coplanar balun technology minimizes system volume
- 82% efficiency at 2500 W output power
CLL3H0914L(S)-700
- 700 W long-pulse capable GaN-on-SiC HEMT for L-band radar applications
- Covers 960–1400 MHz frequency range with excellent efficiency
- Pre-matched input and output networks simplify amplifier design
- Available in ceramic SOT502 packages, both eared and earless
- Up to 61% efficiency at 700 W output power
CLF06H4LS1K5P
- High-power GaN-on-SiC transistor delivering 1500 W CW output power at 600 MHz
- Designed for demanding Industrial, Scientific and Medical applications requiring continuous-wave operation
- Outstanding efficiency of 80% reduces cooling requirements and overall system operating costs
- Operating from a 50 V supply for simplified power system design
- Available in a ceramic SOT539 earless package for robust thermal performance and reliability